1988. Technology. Technology of Instrument Making: Collection of Scientific-Technical Documents /TsNTI “Poisk”, 3(14), 19–27. In English and Russian.

The creation of a silicon integrated sensing element for a transducer of mechanical quantities with high temperature stability of measurements in the range from -60℃ to +80℃ is considered. The optimum impurity concentrations in p-type diffusion resistors when the bridge circuit is powered by a DC current source (DCV) and a DC current source (DCC) are selected.