Categories: Papers

The Technical Report 925.24.432-90. 1990. Manuscript in Russian.

Tikhomirov, Michael Y.; Spalek, Yuri M.; Morozov, Yuri M.; et al

The report presents the results of work on the development and manufacturing technology of integrated silicon transducers for mechanical systems. The set of technical solutions confirmed by the R&D consists of the following main items:
– The limits of miniaturization within the anisotropic chemical etching technology on standard substrates used in planar technology are achieved;
– the results for extending the temperature range of sensors with p-junction structures have been surpassed significantly, by more than 50°C;
– a technical solution to push down the pressure limit that limits the use of sensors with semiconductor elastic elements was investigated and these solutions were obtained for the small class (weight less than 40g);
– the system of technological solutions for the design and production of sensors of mechanical values is supplemented by a group of technological processes of plasma profiling, which are of great importance for the conjugation of the forms of crystals with the parts of lathe machining.

The conducted research allows us to: determine the range of R&D aimed at creating various detectors of mechanical quantities, which should include, first of all, parametric series of gauge pressure sensors for low-aggressive environments;
determine the necessity of R&D on creation of pressure resisting elements through hydraulic fluids to the silicon elastic element; research of long-term stability of the elements and joints of the sensors; mathematical software for calculating stresses in the sensor bodies at high pressures and vibrations; search of solutions to raise the upper limit of the working temperature range; research of vacuum connection methods of silicon to the body metal to create absolute pressure sensors.

m-tkh

Recent Posts

Integrated Strain-Sensitive Element Of Mechanical Transducer With Low Temperature Instability

1988. Technology. Technology of Instrument Making: Collection of Scientific-Technical Documents /TsNTI “Poisk”, 3(14), 19–27. In…

3 years ago

Bridge measuring circuit of silicon integrated mechanical transducer for temperature range 0 – 300°C

1991. Manuscript in R&D Report 925.24.432-90. DOI:10.13140/RG.2.2.29283.63526/2In English and Russian.In 1988-91, we were filing an invention…

3 years ago

Temperature Dependence of Sensitivity of Silicon Integrated Mechanical Transducer in The Temperature Range from -60°C to +200°C

1988. Technology. Technology of Instrument Making: CSTI “Poisk” , 13(2), 80–100. (USSR)For the output signal…

3 years ago

Small-size silicon accelerometer with a thermally compensated signal in the temperature range of 0–200°C

March 1991. Measurement Techniques 34(3):262-265 DOI: 10.1007/BF00978797 We describe an integrated single-component inertial accelerometer with…

4 years ago

Paper (Download)

Paper (Download) M. Yu. Tikhomirov. Silicon Integral Sensors of Mechanical Values of Control Systems for…

4 years ago