Bridge measuring circuit of silicon integrated mechanical transducer for temperature range 0 – 300°C

1991. Manuscript in R&D Report 925.24.432-90. 

DOI:

10.13140/RG.2.2.29283.63526/2

In English and Russian.

In 1988-91, we were filing an invention application for “Method of manufacturing a piezoresistive integrated silicon mechanical transducer.” At that time, planar technology already made it possible to manufacture miniature transducers for measuring parameters in situations that had previously been considered completely inaccessible. The disadvantage, however, was the narrow operating temperature range. This paper discusses technical solutions for creating a transducer with an extended operating temperature range using a distributed-parameter circuit without p-n junctions. The data presented relate to the field of semiconductor devices and can be used in the manufacture of high-precision semiconductor sensors of physical quantities for operation in a wide temperature range.