Temperature Dependence of Sensitivity of Silicon Integrated Mechanical Transducer in The Temperature Range from -60°C to +200°C

1988. Technology. Technology of Instrument Making: CSTI “Poisk” , 13(2), 80–100. (USSR)

For the output signal ( $ U_{out} $ ) of integrated transducers (IRT) with a bridge measuring circuit (BC) having a “square” topological structure, a comparative analysis of data from different studies of the electrophysical characteristics of the tensoresistive layers was performed. Because of the significant difference in the results obtained from these data within a stable technology, the characteristics of BC have been investigated depending on the average level of the doped layer ($\rho$). The boundaries of the thermocompensation ranges were determined, in which the temperature error of MC with different $\rho$ does not exceed $ 0.02\ %/{}^{o}C $